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2SB1140 - PNP Transistor

Sanyo Semicon Device

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Datasheet Details

Part number	2SB1140
Manufacturer	Sanyo Semicon Device
File Size	66.81 KB
Description	PNP Transistor
Datasheet	2SB1140_SanyoSemiconDevice.pdf

2SB1140 Product details

Features

Adoption of FBET, MBIT processes.
Low saturation voltage.
Large current capacity.
Short switching time. 1.6 0.8 1.4 3.3 3.0 1.5 3.0 0.8 0.75 7.5 15.5 11.0 0.7 1 2 3 4.8 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Base Current Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP IB.

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Published: Mar 22, 2005 |