K9GAG08U0M - Flash Memory

Samsung

Datasheet Details

Offered in 1Gx8bit, the K9G8G08U0M is a 8G-bit NAND Flash Memory with spare 256M-bit.

Fast Write Cycle Time - Program time : 800µs(Typ. ) - Block Erase Time : 1.5ms(Typ. ).
Command/Address/Data Multiplexed I/O Port.
Hardware Data Protection - Program/Erase Lockout During Power Transitions.
Reliable CMOS Floating-Gate Technology - Endurance : 5K Program/Erase Cycles(with 4bit/512byte ECC) - Data Retention : 10 Years.
Command Register Operation.
Unique ID for Copyright Protection.
Package : - K9G8G08U0M-PCB0/PIB0 : Pb-F.

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Published: Oct 26, 2008 |