K4N56163QF-GC - 256Mbit gDDR2 SDRAM

Samsung

K4N56163QF-GC Datasheet Preview — Preview of K4N56163QF-GC PDF

Datasheet Details

Part number	K4N56163QF-GC
Manufacturer	Samsung
File Size	1.37 MB
Description	256Mbit gDDR2 SDRAM
Datasheet	K4N56163QF-GC-Samsung.pdf

K4N56163QF-GC Product details

Description

FOR 4M x 16Bit x 4 Bank gDDR2 SDRAM The 256Mb gDDR2 SDRAM chip is organized as 4Mbit x 16 I/O x 4banks banks device.This synchronous device achieve high speed graphic double-data-rate transfer rates of up to 1000Mb/sec/pin for general applications.The chip is designed to comply with the following key gDDR2 SDRAM

Features

1.8V + 0.1V power supply for device operation.
1.8V + 0.1V power supply for I/O interface.
4 Banks operation.
Posted CAS.
Programmable CAS Letency : 4,5,6 and 7.
Programmable Additive Latency : 0, 1, 2, 3. 4 and 5.
Write Latency (WL) = Read Latency (RL) -1.
Burst Legth : 4 and 8 (Interleave/nibble sequential).
Programmable Sequential/ Interleave Burst Mode.
Bi-directional Differential Data-Strobe (Single-.

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Published: Jul 16, 2016 |