K4N56163QF-GC 256Mbit gDDR2 SDRAM

Samsung

Description

K4N56163QF-GC 256M gDDR2 SDRAM 256Mbit gDDR2 SDRAM Revision 2.0 October 2005 Notice INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG.
FOR 4M x 16Bit x 4 Bank gDDR2 SDRAM The 256Mb gDDR2 SDRAM chip is organized as 4Mbit x 16 I/O x 4banks banks device.

📥 Download Datasheet

K4N56163QF-GC Datasheet Preview — Preview of K4N56163QF-GC PDF

Datasheet Specifications

Part number: K4N56163QF-GC
Manufacturer: Samsung
File Size: 1.37 MB
Datasheet: K4N56163QF-GC-Samsung.pdf
Description: 256Mbit gDDR2 SDRAM

Features

* 1.8V + 0.1V power supply for device operation
* 1.8V + 0.1V power supply for I/O interface
* 4 Banks operation
* Posted CAS
* Programmable CAS Letency : 4,5,6 and 7
* Programmable Additive Latency : 0, 1, 2, 3. 4 and 5
* Write Latency (WL) =

Applications

* where Product failure could result in loss of life or personal or physical harm, or any military or defense application, or any governmental procurement to which special terms or provisions may apply.
* Samsung Electronics reserves the right to change products or specification without notice.

K4N56163QF-GC Distributors

📁 Related Datasheet

K4N25 K4N25A K4N25G K4N25H K4N26 K4N27

📌 All Tags

K4N56163QF-GC 256Mbit gDDR2 SDRAM Samsung

Samsung K4N56163QF-GC-like datasheet