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K4J52324QE 512Mbit GDDR3 SDRAM

K4J52324QE Description

K4J52324QE 512M GDDR3 SDRAM 512Mbit GDDR3 SDRAM Revision 1.3 Feb 2008 INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND.
FOR 2M x 32Bit x 8 Bank GDDR3 SDRAM The K4J52324QE is 536,870,912 bits of hyper synchronous data rate Dynamic RAM organized as 8 x 2,097,152 words by.

K4J52324QE Features

* 1.9V + 0.1V power supply for device operation for -BJ
* 1.9V + 0.1V power supply for I/O interface for -BJ
* 1.8V + 0.1V power supply for device operation for -BC
* 1.8V + 0.1V power supply for I/O interface for -BC

K4J52324QE Applications

* where Product failure could result in loss of life or personal or physical harm, or any military or defense application, or any governmental procurement to which special terms or provisions may apply.
* Samsung Electronics reserves the right to change products or specification without notice.

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Datasheet Details

Part number
K4J52324QE
Manufacturer
Samsung
File Size
1.40 MB
Datasheet
K4J52324QE-Samsung.pdf
Description
512Mbit GDDR3 SDRAM

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512Mbit GDDR3 SDRAM Samsung
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