MR16R162GDF0 - (MR1xR1622(4/8/G)DF0) Key Timing Parameters

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Samsung semiconductor

Datasheet Details

Part number	MR16R162GDF0
Manufacturer	Samsung semiconductor
File Size	442.47 KB
Description	(MR1xR1622(4/8/G)DF0) Key Timing Parameters
Datasheet	MR16R162GDF0 Datasheet
Note	This datasheet PDF includes multiple part numbers: MR16R162GDF0, MR16R1622. Please refer to the document for exact specifications by model.
Additional preview pages of the MR16R162GDF0 datasheet.

Product details

Description

Signal Pins A1, A3, A5, A7, A9, A11, A13, A15, A17, A19, A21, A23, A25, A27, A29, A31, A33, A39, A52, A60, A62, A64, A66, A68, A70, A72, A74, A76, A78, A80, A82, A84, A86, A88, A90, A92, B1, B3, B5, B7, B9, B11, B13, B15, B17, B19, B21, B23, B25, B27, B29, B31, B33, B39, B52, B60, B62, B64, B66, B68, B70, B72, B74, B76, B78, B80, B82, B84, B86, B88, B90, B92 B10 B12 B34 A20, B20, A22, B22, A24 A14 A12 I I I I I I RSL RSL VCMOS RSL RSL RSL I/O Type Description Gnd Ground reference for RDRAM cor

Features

High speed up to 1066 MHz RDRAM storage.
184 edge connector pads with 1mm pad spacing.
Module PCB size : 133.35mm x 31.75mm x 1.27mm (5.25” x 1.25” x 0.05”) - 256Mb and 288Mb base PC800 RIMM Module.
Module PCB size : 133.35mm x 34.93mm x 1.27mm (5.25” x 1.375” x 0.05”) - 256Mb and 288Mb base PC1066 RIMM Module.
Each RDRAM device has 32 banks, for a total of 512, 256, 128, 64 banks on each 512/576MB, 256/288MB, 128/144MB, 64/72MB module respectively.

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Other Datasheets by Samsung semiconductor

MR16R162GAF0 - (MR1xR1622(4/8/G)AF0) (16Mx16)x2(4/8/16)pcs RIMM Module based on 256Mb A-die
MR16R1622AF0 - (MR1xR1622(4/8/G)AF0) (16Mx16)x2(4/8/16)pcs RIMM Module based on 256Mb A-die
MR16R1622DF0 - (MR1xR1622(4/8/G)DF0) Key Timing Parameters
MR16R1624AF0 - (MR1xR1622(4/8/G)AF0) (16Mx16)x2(4/8/16)pcs RIMM Module based on 256Mb A-die
MR16R1624DF0 - (MR1xR1622(4/8/G)DF0) Key Timing Parameters
MR16R1624GEG0 - Key Timing Parameters

Published: Jan 19, 2006 |