KM6164000B Datasheet (Samsung semiconductor) - 256Kx16 bit Low Power CMOS Static RAM

KM6164000B, 256Kx16 bit Low Power CMOS Static RAM

The KM616V4000B families are fabricated by SAMSUNG′s advanced CMOS process technology.

The families support various operating temperature ranges and small package types for user flexibility of system design.

The families also support low data retention voltage for battery back-up operation with low

KM6164000B Family Document Title 256Kx16 bit Low Power CMOS Static RAM CMOS SRAM Revision History Revision No.

0.0 0.1 History Initial draft Revise - Die name change ; A to B Finalize Revise - Operating current update and release.

ICC(Read/Write) = 30/60 → 15/75mA ICC1(Read/Write) = 30/60 → 15/75mA ICC2 = 160 → 130mA Revise - Change datasheet format - Remove ICC write value from table.

Revise - Change test load at 55ns: 100pF → 50pF Errarta correction Draft Data June 28, 1996 September 19, 1