KM6161000B Datasheet (Samsung Electronics) - 64K X 16-Bit Low Power CMOS Static RAM

KM6161000B, 64K X 16-Bit Low Power CMOS Static RAM

The KM6161000B families are fabricated by SAMSUNG′s advanced CMOS process technology.

The families support various operating temperature ranges and have various package types for user flexibility of system design.

The families also support low data retention voltage for battery back-up operation wit

KM6161000B Family Document Title 64K x16 bit Low Power CMOS Static RAM Revision History Revision No.

History 0.0 Initial draft 1.0 Finalize - One datasheet for commercial and industrial part.

2.0 Revised - Change datasheet format.

- Remove Icc write current value.

- Remove low power product from product CMOS SRAM Draft Data August 12, 1995 April 15, 1996 Remark Preliminary Final February 12, 1998 Final The attached datasheets are provided by SAMSUNG Electronics.

SAMSUNG Electronics CO., LTD

KM6161000B Features

* SUMMARY

* Process Technology : Poly Load

* Organization : 64K x16

* Data Byte Control : LB=I/O1~8, UB=I/O9~16

* Power Supply Voltage : 4.5~5.5V

* Low Data Retention Voltage : 2V(Min)

* Three state output and TTL Compatible

* Package Type : 44-T