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KFG5616Q1M-DEB - OneNAND256 FLASH MEMORY

Description

is revised.

3.

Changed Read while Load and Write While Program diagram.

Features

  • Design Technology: 0.12µm.
  • Voltage Supply - 1.8V device(KFG5616Q1M) : 1.7V~1.95V - 2.65V device(KFG5616D1M) : 2.4V~2.9V - 3.3V device(KFG5616U1M) : 2.7V~3.6V.
  • Organization - Host Interface:16bit.
  • Internal BufferRAM(3K Bytes) - 1KB for BootRAM, 2KB for DataRAM.
  • NAND Array - Page Size : (1K+32)bytes - Block Size : (64K+2K)bytes FLASH MEMORY www. DataSheet4U. com.
  • Architecture.
  • Performance.
  • Host Interface type - Synchronous B.

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Other Datasheets by Samsung Semiconductor

Part Number Description
KFG5616Q1A-DEB5 OneNAND Specification FLASH MEMORY
KFG5616Q1A-PEB5 OneNAND Specification FLASH MEMORY
KFG5616D1A-DEB5 OneNAND Specification FLASH MEMORY
KFG5616D1A-PEB5 OneNAND Specification FLASH MEMORY
KFG5616D1M-DEB OneNAND256 FLASH MEMORY

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
OneNAND256 FLASH MEMORY www.DataSheet4U.com OneNAND SPECIFICATION Product OneNAND256 Part No. KFG5616Q1M-DEB KFG5616D1M-DEB KFG5616U1M-DIB VCC(core & IO) 1.8V(1.7V~1.95V) 2.65V(2.4V~2.9V) 3.3V(2.7V~3.6V) Temperature Extended Extended Industrial PKG 63FBGA(LF)/48TSOP1 63FBGA(LF)/48TSOP1 63FBGA(LF)/48TSOP1 Version: Ver. 1.2 Date: June 15th, 2005 1 OneNAND256 FLASH MEMORY www.DataSheet4U.com INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE, TO ANY INTELLECTUAL PROPERTY RIGHTS IN SAMSUNG PRODUCTS OR TECHNOLOGY.
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