K9F1G08U0A, K9F FLASH MEMORY

Samsung semiconductor

Description

ELECTRONICS March.2003 San 16 Banwol-Ri Taean-Eup Hwasung- City Kyungki Do, Korea Tel.) 82 - 31 - 208 - 6463 Fax.) 82 - 31 -208 - 6799 1Gb 1.8V NA.
: Some of AC characteristics are not meeting the specification.

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K9F1G08U0A Datasheet Preview — This datasheet PDF includes multiple part numbers: K9F1G08U0A, K9F. Please refer to the document for exact specifications by model.

Datasheet Specifications

Part number: K9F1G08U0A, K9F
Manufacturer: Samsung semiconductor
File Size: 713.92 KB
Datasheet: K9F-1G08.pdf
Description: FLASH MEMORY
Note: This datasheet PDF includes multiple part numbers: K9F1G08U0A, K9F.
Please refer to the document for exact specifications by model.

Features

* Voltage Supply -1.8V device(K9F1GXXQ0M): 1.70V~1.95V -3.3V device(K9F1GXXU0M): 2.7 V ~3.6 V
* Organization - Memory Cell Array -X8 device(K9F1G08X0M) : (128M + 4,096K)bit x 8bit -X16 device(K9F1G16X0M) : (64M + 2,048K)bit x 16bit - Data Register -X8 device(K9F1G08X0M): (2K + 64)bit

Applications

* such as solid state file storage and other portable applications requiring non-volatility. SAMSUNG 3 K9F1G08U0M-VCB0,VIB0,FCB0,FIB0 K9F1G08Q0M-YCB0,YIB0,PCB0,PIB0 K9F1G16Q0M-YCB0,YIB0,PCB0,PIB0 K9F1G08U0M-YCB0,YIB0,PCB0,PIB0 K9F1G16U0M-YCB0,YIB0,PCB0,PIB0 FLASH MEMORY PIN CONFIGURATION (TSOP1) K

K9F1G08U0A Distributors

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K9F1G08U0B K9F1G08U0C K9F1G08U0D K9F1G08U0M-FCB0 K9F1G08U0M-FIB0 K9F1G08U0M-PCB0

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K9F FLASH MEMORY Samsung semiconductor

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