K9F1G08R0A Datasheet - Samsung semiconductor

K9F1G08R0A, 128M x 8 Bit / 256M x 8 Bit NAND Flash Memory

K9F1G08R0A K9F1G08U0A K9K2G08U1A FLASH MEMORY Document Title 128M x 8 Bit / 256M x 8 Bit NAND Flash Memory Revision History Revision No 0.0 0.1 Hi.
of Copy-back program is changed 4.

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Datasheet Details

Part number:

K9F1G08R0A

Manufacturer:

Samsung semiconductor

File Size:

1.05 MB

Description:

128M x 8 Bit / 256M x 8 Bit NAND Flash Memory

Features

* Voltage Supply -1.8V device(K9F1G08R0A): 1.65V~1.95V -3.3V device(K9F1G08U0A): 2.7 V ~3.6 V
* Organization - Memory Cell Array : (128M + 4,096K)bit x 8bit - Data Register : (2K + 64)bit x8bit - Cache Register : (2K + 64)bit x8bit
* Automatic Program and Erase - Page Program

Applications

* such as solid state file storage and other portable applications requiring non-volatility. 2 K9F1G08R0A K9F1G08U0A K9K2G08U1A PIN CONFIGURATION (TSOP1) K9F1G08X0A-YCB0,PCB0/YIB0,PIB0 X8 N. C N. C N. C N. C N. C N. C R/B RE CE N. C N. C Vcc Vss N. C N. C CLE ALE WE WP N. C N. C N. C N. C N. C 1 2 3 4 5 6 7 8 9 10

K9F1G08R0A Distributors

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K9F1G08R0B K9F1G08B0C K9F1G08Q0M-PCB0 K9F1G08Q0M-PIB0 K9F1G08Q0M-YCB0 K9F1G08Q0M-YIB0

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K9F1G08R0A 128M Bit 256M Bit NAND Flash Memory Samsung semiconductor

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