K7A203600A - 64Kx36-Bit Synchronous Pipelined Burst SRAM

Samsung semiconductor

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Datasheet Details

Part number: K7A203600A
Manufacturer: Samsung semiconductor
File Size: 413.70 KB
Datasheet: K7A203600A_Samsungsemiconductor.pdf
Description: 64Kx36-Bit Synchronous Pipelined Burst SRAM

K7A203600A Product details

Description

The K7A203600A is a 2,359,296-bit Synchronous Static Random Access Memory designed for high performance second level cache of Pentium and Power PC based System.

Features

Synchronous Operation. 2 Stage Pipelined operation with 4 Burst. On-Chip Address Counter. Self-Timed Write Cycle. On-Chip Address and Control Registers. VDD= 3.3V+0.3V/-0.165V Power Supply. VDDQ Supply Voltage 3.3V+0.3V/-0.165V for 3.3V I/O or 2.5V+0.4V/-0.125V for 2.5V I/O. 5V Tolerant Inputs Except I/O Pins. Byte Writable Func.

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64Kx36-Bit Synchronous Pipelined Burst SRAM Samsung semiconductor

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