K7A203200A - 64Kx32-Bit Synchronous Pipelined Burst SRAM

Samsung semiconductor

📥 Download Datasheet

K7A203200A Datasheet Preview — Preview of K7A203200A PDF

Datasheet Details

Part number: K7A203200A
Manufacturer: Samsung semiconductor
File Size: 304.82 KB
Datasheet: K7A203200A_Samsungsemiconductor.pdf
Description: 64Kx32-Bit Synchronous Pipelined Burst SRAM

K7A203200A Product details

Description

The K7A203200A is a 2,097,152-bit Synchronous Static Random Access Memory designed for high performance second level cache of Pentium and Power PC based System..

Features

Synchronous Operation. 2 Stage Pipelined operation with 4 Burst. On-Chip Address Counter. Self-Timed Write Cycle. On-Chip Address and Control Registers. VDD= 3.3V+0.3V/-0.165V Power Supply. VDDQ Supply Voltage 3.3V+0.3V/-0.165V for 3.3V I/O or 2.5V+0.4V/-0.125V for 2.5V I/O. 5V Tolerant Inputs Except I/O Pins. Byte Writable Func.

📁 Related Datasheet

K7A161830B - 512Kx36 & 1Mx18 Synchronous SRAM (SAMSUNG ELECTRONICS)
K7A163630B - 512Kx36 & 1Mx18 Synchronous SRAM (SAMSUNG ELECTRONICS)
K7A403600M - 128K x 36 Synchronous SRAM (Samsung)
K7A50D - TK7A50D (Toshiba Semiconductor)
K7A60W - TK7A60W (Toshiba)
K7A65D - Silicon N-Channel MOSFET (Toshiba)

📌 All Tags

64Kx32-Bit Synchronous Pipelined Burst SRAM Samsung semiconductor

Samsung semiconductor K7A203200A-like datasheet

K7A203200B - 64Kx36/x32 Synchronous SRAM
K7A203600A - 64Kx36-Bit Synchronous Pipelined Burst SRAM
K7A203600B - 64Kx36/x32 Synchronous SRAM
K7A201800B - 64Kx36 & 64Kx32-Bit Synchronous Pipelined Burst SRAM
K7A161800A - 512K x 36 / x32 & 1M x 18 Synchronous SRAM
K7A161801A - 512K x 36 / 32 & 1M x 18 Synchronous SRAM

K7A203200A Stock/Price