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K6T1008C2E - CMOS SRAM

K6T1008C2E Description

K6T1008C2E Family Document Title 128Kx8 bit Low Power CMOS Static RAM Revision History Revision No.History 0.0 Design target 1.0 Finalize - Improv.

K6T1008C2E Features

* Process Technology: TFT
* Organization: 128Kx8
* Power Supply Voltage: 4.5~5.5V
* Low Data Retention Voltage: 2V(Min)
* Three state o

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CMOS SRAM Samsung semiconductor
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