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K6T2008S2M - 256K X 8 Bit Low Power And Low Voltage CMOS Static RAM

K6T2008S2M Description

www.DataSheet4U.com K6T2008S2M Family Document Title 256Kx8 bit Low Power and Low Voltage CMOS Static RAM CMOS SRAM Revision History Revision No.0.
The K6T2008S2M families are fabricated by SAMSUNG′s advanced CMOS process technology.

K6T2008S2M Features

* Process Technology: TFT
* Organization: 256Kx8
* Power Supply Voltage K6T2008S2M Family: 2.3~2.7V
* Low Data Retention Voltage: 2V(Min)
* Three state output and TTL Compatible
* Package Type: 32-TSOP1-0820F, 32-TSOP1-0813.4F CMOS SRAM GENERAL DESCRI

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Datasheet Details

Part number
K6T2008S2M
Manufacturer
Samsung Semiconductor
File Size
166.68 KB
Datasheet
K6T2008S2M_SamsungSemiconductor.pdf
Description
256K X 8 Bit Low Power And Low Voltage CMOS Static RAM

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256K Bit Low Power And Low Voltage CMOS Static RAM Samsung Semiconductor
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