Datasheet4U Logo Datasheet4U.com

K6R1008C1B-I10 - 128Kx8 Bit High Speed Static RAM5V Operating/ Revolutionary Pin out. Operated at Commercial and Industrial Temperature Ranges.

Description

The K6R1008C1B is a 1,048,576-bit high-speed Static Random Access Memory organized as 131,072 words by 8 bits.

The K6R1008C1B uses 8 common input and output lines and has an output enable pin which operates faster than address access time at read cycle.

Features

  • Fast Access Time 8,10,12ns(Max. ).
  • Low Power Dissipation Standby (TTL) : 50mA(Max. ) (CMOS) : 10mA(Max. ) Operating K6R1008C1B-8 : 160mA(Max. ) K6R1008C1B-10 : 155mA(Max. ) K6R1008C1B-12 : 150mA(Max. ).
  • Single 5.0V ±10% Power Supply.
  • TTL Compatible Inputs and Outputs.
  • I/O Compatible with 3.3V Device.
  • Fully Static Operation - No Clock or Refresh required.
  • Three State Outputs.
  • Center Power/Ground Pin Configuration.
  • Standar.

📥 Download Datasheet

Datasheet Details

Part number K6R1008C1B-I10
Manufacturer Samsung Semiconductor
File Size 169.67 KB
Description 128Kx8 Bit High Speed Static RAM5V Operating/ Revolutionary Pin out. Operated at Commercial and Industrial Temperature Ranges.
Datasheet download datasheet K6R1008C1B-I10 Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
K6R4008C1C 512K x 8bit High Speed Static CMOS SRAM Samsung
K6R4008C1C-C 512K x 8bit High Speed Static CMOS SRAM Samsung
K6R4008C1C-E 512K x 8bit High Speed Static CMOS SRAM Samsung
K6R4008C1C-I 512K x 8bit High Speed Static CMOS SRAM Samsung
K6R4016C1D CMOS SRAM Samsung

Other Datasheets by Samsung Semiconductor

Part Number Description
K6R1008C1B-I12 128Kx8 Bit High Speed Static RAM5V Operating/ Revolutionary Pin out. Operated at Commercial and Industrial Temperature Ranges.
K6R1008C1B-I8 128Kx8 Bit High Speed Static RAM5V Operating/ Revolutionary Pin out. Operated at Commercial and Industrial Temperature Ranges.
K6R1008C1B-C10 128Kx8 Bit High Speed Static RAM5V Operating/ Revolutionary Pin out. Operated at Commercial and Industrial Temperature Ranges.
K6R1008C1B-C12 128Kx8 Bit High Speed Static RAM5V Operating/ Revolutionary Pin out. Operated at Commercial and Industrial Temperature Ranges.
K6R1008C1B-C8 128Kx8 Bit High Speed Static RAM5V Operating/ Revolutionary Pin out. Operated at Commercial and Industrial Temperature Ranges.

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
PRELIMINARY K6R1008C1B-C, K6R1008C1B-I Document Title 128Kx8 Bit High Speed Static RAM(5V Operating), Revolutionary Pin out. Operated at Commercial and Industrial Temperature Ranges. Preliminary PRELIMINARY CMOS SRAM Revision History Rev No. Rev. 0.0 Rev.1.0 History Initial release with Design Target. Release to Preliminary Data Sheet. 1.1. Replace Design Target to Preliminary. Release to Final Data Sheet. 2.1. Delete Preliminary. 2.2. Delete 32-SOJ-300 package. 2.3. Delete L-version. 2.4. Delete Data Retention Characteristics and Waveform. 2.5. Add Capacitive load of the test environment in A.C test load. 2.6. Change D.C characteristics. Previous spec. Changed spec. Items (8/10/12ns part) (8/10/12ns part) ICC 160/150/140mA 160/155/150mA ISB 30mA 50mA Draft Data Apr. 1st, 1997 Jun.
Published: |