K6F2008V2E-LF55 - 256Kx8 bit Super Low Power and Low Voltage Full CMOS Static RAM

Samsung semiconductor

K6F2008V2E-LF55 Description

K6F2008V2E Family Document Title CMOS SRAM 256Kx8 bit Super Low Power and Low Voltage Full CMOS Static RAM Revision History Revision No.History 0..
The K6F2008V2E families are fabricated by SAMSUNG′s advanced Full CMOS process technology.

K6F2008V2E-LF55 Features

* Process Technology: Full CMOS
* Organization: 256Kx8
* Power Supply Voltage: 3.0 ~ 3.6V
* Low Data Retention Voltage: 1.5V(Min)
* Three State Outputs

📥 Download Datasheet

K6F2008V2E-LF55 Datasheet Preview — Preview of K6F2008V2E-LF55 PDF

Datasheet Details

Part number: K6F2008V2E-LF55
Manufacturer: Samsung semiconductor
File Size: 134.49 KB
Datasheet: K6F2008V2E-LF55_Samsungsemiconductor.pdf
Description: 256Kx8 bit Super Low Power and Low Voltage Full CMOS Static RAM

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256Kx8 bit Super Low Power and Low Voltage Full CMOS Static RAM Samsung semiconductor

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