K6F2008V2E - 256Kx8 bit Super Low Power and Low Voltage Full CMOS Static RAM

Samsung semiconductor

K6F2008V2E Description

K6F2008V2E Family Document Title CMOS SRAM 256Kx8 bit Super Low Power and Low Voltage Full CMOS Static RAM Revision History Revision No.History 0..
The K6F2008V2E families are fabricated by SAMSUNG′s advanced Full CMOS process technology.

K6F2008V2E Features

* Process Technology: Full CMOS
* Organization: 256Kx8
* Power Supply Voltage: 3.0 ~ 3.6V
* Low Data Retention Voltage: 1.5V(Min)
* Three State Outputs

📥 Download Datasheet

K6F2008V2E Datasheet Preview — Preview of K6F2008V2E PDF

Datasheet Details

Part number: K6F2008V2E
Manufacturer: Samsung semiconductor
File Size: 134.49 KB
Datasheet: K6F2008V2E_Samsungsemiconductor.pdf
Description: 256Kx8 bit Super Low Power and Low Voltage Full CMOS Static RAM

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256Kx8 bit Super Low Power and Low Voltage Full CMOS Static RAM Samsung semiconductor

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K6F2008V2E Stock/Price