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K6F1616U6C - 16Mb(1M x 16 bit) Low Power SRAM

Product Overview

Samsung semiconductor

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K6F1616U6C 16Mb(1M x 16 bit) Low Power SRAM by Samsung semiconductor - Datasheet Preview — Datasheet preview – K6F1616U6C

Datasheet Details

Part number	K6F1616U6C
Manufacturer	Samsung semiconductor
File Size	182.63 KB
Description	16Mb(1M x 16 bit) Low Power SRAM
Datasheet	K6F1616U6C Datasheet
Additional preview pages of the K6F1616U6C datasheet.

Product details

Description

The K6F1616U6C families are fabricated by SAMSUNG′s advanced full CMOS process technology.

Features

Process Technology: Full CMOS.
Organization: 1M x16.
Power Supply Voltage: 2.7~3.3V.
Low Data Retention Voltage: 1.5V(Min).
Three State Outputs.
Package Type: 48-FBGA - 6.00x7.00 CMOS SRAM.

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Published: Jan 27, 2007 |