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K6F1616U6A - 1M x16 bit Super Low Power and Low Voltage Full CMOS Static RAM

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Samsung semiconductor

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K6F1616U6A 1M x16 bit Super Low Power and Low Voltage Full CMOS Static RAM by Samsung semiconductor - Datasheet Preview — Datasheet preview – K6F1616U6A

Datasheet Details

Part number	K6F1616U6A
Manufacturer	Samsung semiconductor
File Size	142.35 KB
Description	1M x16 bit Super Low Power and Low Voltage Full CMOS Static RAM
Datasheet	K6F1616U6A Datasheet
Additional preview pages of the K6F1616U6A datasheet.

Product details

Description

The K6F1616U6A families are fabricated by SAMSUNG′s advanced full CMOS process technology.

Features

Process Technology: Full CMOS.
Organization: 1M x16.
Power Supply Voltage: 2.7~3.3V.
Low Data Retention Voltage: 1.5V(Min).
Three State Outputs.
Package Type: 48-TBGA-7.50x9.50 CMOS SRAM.

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Published: Jan 27, 2007 |