K4S64163LH-RE - 1M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA

Samsung semiconductor

The K4S64163LH-RE by Samsung semiconductor is a 1M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA. Below is the official datasheet preview.

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K4S64163LH-RE 1M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA by Samsung semiconductor - Datasheet Preview — Official preview page of the **K4S64163LH-RE** 1M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA datasheet (Samsung semiconductor).

Datasheet Details

Part number	K4S64163LH-RE
Manufacturer	Samsung semiconductor
File Size	141.86 KB
Description	1M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA
Datasheet	K4S64163LH-RE_Samsungsemiconductor.pdf
Additional preview pages of the K4S64163LH-RE datasheet.

K4S64163LH-RE Product details

Description

The K4S64163LH is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 1,048,576 words by 16 bits, fabricated with SAMSUNG’s high performance CMOS technology.

Features

2.5V power supply.
LVCMOS compatible with multiplexed address.
Four banks operation.
MRS cycle with address key programs. -. CAS latency (1, 2 & 3). -. Burst length (1, 2, 4, 8 & Full page). -. Burst type (Sequential & Interleave).
EMRS cycle with address key programs.
All inputs are sampled at the positive going edge of the system clock.
Burst read single-bit write operation.
Special Function Support. -. PASR (Parti.

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Other Datasheets by Samsung semiconductor

K4S64163LH-RBC - 1M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA
K4S64163LH-RBE - 1M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA
K4S64163LH-RBF - 1M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA
K4S64163LH-RBG - 1M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA
K4S64163LH-RBL - 1M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA
K4S64163LH-RBN - 1M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA

Published: Apr 22, 2010 |