K4S640832F - 64Mbit SDRAM 2M x 8Bit x 4 Banks Synchronous DRAM LVTTL

Product Overview

Samsung semiconductor

Datasheet Details

Part number	K4S640832F
Manufacturer	Samsung semiconductor
File Size	118.63 KB
Description	64Mbit SDRAM 2M x 8Bit x 4 Banks Synchronous DRAM LVTTL
Datasheet	K4S640832F Datasheet
Additional preview pages of the K4S640832F datasheet.

Product details

Description

The K4S640832F is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 2,097,152 words by 8 bits, fabricated with SAMSUNG′s high performance CMOS technology.

Features

JEDEC standard 3.3V power supply LVTTL compatible with multiplexed address Four banks operation MRS cycle with address key programs -. CAS latency (2 & 3) -. Burst length (1, 2, 4, 8 & Full page) -. Burst type (Sequential & Interleave) All inputs are sampled at the positive going edge of the system clock Burst read single-bit write operation DQM for masking Auto & self refresh 64ms refresh period (4K Cycle) CMOS SDRAM.

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Other Datasheets by Samsung semiconductor

K4S640832F-TC75 - 64Mbit SDRAM 2M x 8Bit x 4 Banks Synchronous DRAM LVTTL
K4S640832F-TL75 - 64Mbit SDRAM 2M x 8Bit x 4 Banks Synchronous DRAM LVTTL
K4S640832C - 64Mbit SDRAM 2M x 8Bit x 4 Banks Synchronous DRAM LVTTL
K4S640832D - 64Mbit SDRAM 2M x 8Bit x 4 Banks Synchronous DRAM LVTTL
K4S640832E - 64Mbit SDRAM 2M x 8Bit x 4 Banks Synchronous DRAM LVTTL
K4S640832E-TC1H - 64Mbit SDRAM 2M x 8Bit x 4 Banks Synchronous DRAM LVTTL

Published: Apr 7, 2005 |