K4S283233F-L - 1M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA

Product Overview

Samsung semiconductor

Datasheet Details

Part number	K4S283233F-L
Manufacturer	Samsung semiconductor
File Size	140.98 KB
Description	1M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA
Datasheet	K4S283233F-L Datasheet
Note	This datasheet PDF includes multiple part numbers: K4S283233F-L, K4S. Please refer to the document for exact specifications by model.
Additional preview pages of the K4S283233F-L datasheet.

Product details

Description

The K4S283233F is 134,217,728 bits synchronous high data rate Dynamic RAM organized as 4 x 1,048,576 words by 32 bits, fabricated with SAMSUNG’s high performance CMOS technology.

Features

3.0V & 3.3V power supply.
LVCMOS compatible with multiplexed address.
Four banks operation.
MRS cycle with address key programs. -. CAS latency (1, 2 & 3). -. Burst length (1, 2, 4, 8 & Full page). -. Burst type (Sequential & Interleave).
EMRS cycle with address key programs.
All inputs are sampled at the positive going edge of the system clock.
Burst read single-bit write operation.
Special Function Support. -. PASR.

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Other Datasheets by Samsung semiconductor

K4S283233F-C - 1M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA
K4S283233F-F1H - 1M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA
K4S283233F-F1L - 1M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA
K4S283233F-F60 - 1M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA
K4S283233F-F75 - 1M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA
K4S283233F-FE - 1M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA

Published: Apr 7, 2005 |