K4R271669F - 128Mbit RDRAM(F-die)

Name: K4R271669F
SKU: K4R271669F-263639

Samsung semiconductor

The K4R271669F by Samsung semiconductor is a 128Mbit RDRAM(F-die). Below is the official datasheet preview.

Datasheet Details

Part number	K4R271669F
Manufacturer	Samsung semiconductor
File Size	292.12 KB
Description	128Mbit RDRAM(F-die)
Datasheet	K4R271669F_Samsungsemiconductor.pdf
Additional preview pages of the K4R271669F datasheet.

Signal I/O Type CMOSa # Pins center 2 Description Serial input/output.

for mobile, graphics and communications include power management and byte masking. Direct RDRAM™ SEC 240 xCS8 K4R271669F Figure 1: Direct RDRAM CSP Package The 128Mbit RDRAM devices are offered in a horizontal center-bond fanout CSP package. Key Timing Parameters/Part Numbers Speed Organization tRAC I/O (Row Bin Freq. Access MHz Time) ns -CS8 -CS8 800 800 45 45 Features.
Highest sustained bandwidth per DRAM device - 1.6 GB/s sustained data transfer rate - Separate control and data.

📁 K4R271669F Similar Datasheet

Other Datasheets by Samsung semiconductor

Published: Apr 7, 2005 |