K4H561638F - 256Mb F-die DDR SDRAM Specification

Samsung semiconductor

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Datasheet Details

Part number	K4H561638F
Manufacturer	Samsung semiconductor
File Size	329.94 KB
Description	256Mb F-die DDR SDRAM Specification
Datasheet	K4H561638F_Samsungsemiconductor.pdf

K4H561638F Product details

Description

DDR SDRAM 16Mb x 16 32Mb x 8 VDD DQ0 VDDQ DQ1 DQ2 VSSQ DQ3 DQ4 VDDQ DQ5 DQ6 VSSQ DQ7 NC VDDQ LDQS NC VDD NC LDM WE CAS RAS CS NC BA0 BA1 AP/A10 A0 A1 A2 A3 VDD VDD DQ0 VDDQ NC DQ1 VSSQ NC DQ2 VDDQ NC DQ3 VSSQ NC NC VDDQ NC NC VDD NC NC WE CAS RAS CS NC BA0 BA1 AP/A10 A0 A1 A2 A3 VDD 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 66 65 64 63 62 61 60 59 58 VSS DQ7 VSSQ NC DQ6 VDDQ NC DQ5 VSSQ NC DQ4 VDDQ NC NC VSSQ DQS NC VREF VSS DM CK CK CKE NC A12 A

Features

Double-data-rate architecture; two data transfers per clock cycle.
Bidirectional data strobe L(U)DQS.
Four banks operation.
Differential clock inputs(CK and CK).
DLL aligns DQ and DQS transition with CK transition.
MRS cycle with address key programs -. Read latency 2, 2.5 (clock) -. Burst length (2, 4, 8) -. Burst type (sequential & interleave).
All inputs except data & DM are sampled at the positive going edge of the system clock(.

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Published: Aug 29, 2005 |