STS31-DIS - High-Accuracy Digital Temperature Sensor(SENSIRION)
STS35-DIS - High-Accuracy Digital Temperature Sensor(SENSIRION)
STS3620 - Dual N-Channel Enhancement Mode Field Effect Transistor(SamHop)
STS3621 - Dual P & N-Channel Enhancement Mode Field Effect Transistor(SamHop)
STS3622 - Dual N-Channel Enhancement Mode Field Effect Transistor(SamHop)
STS3623 - Dual N-Channel Enhancement Mode Field Effect Transistor(SamHop)
Other Datasheets by SamHop Microelectronics
STS3401A- P-Channel Enhancement Mode Field Effect Transistor
STS3400- N-Channel E nhancement Mode F ield E ffect Trans is tor
STS3402- N-Channel Enhancement Mode Field Effect Transistor
STS3403- P-Channel Enhancement Mode Field Effect Transistor
STS3404- N-Channel Enhancement Mode Field Effect Transistor
STS3405- P-Channel Enhancement Mode Field Effect Transistor
STS3409- P-Channel Enhancement Mode Field Effect Transistor
STS3409L- P-Channel Enhancement Mode Field Effect Transistor
Full PDF Text Transcription
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Green Product
S T S 3401
J un.15 2004
S amHop Microelectronics C orp.
P -C hannel E nhancement Mode MOS FE T
P R ODUC T S UMMAR Y
V DS S
-30V
F E AT UR E S
( m Ω ) Max
ID
-3A
R DS (ON)
S uper high dense cell design for low R DS (ON ).
75 @ V G S = -10V 100 @ V G S = -4.5V
R ugged and reliable. S OT-23 P ackage.
D
S OT-23
D S G
G
S
ABS OLUTE MAXIMUM R ATINGS (T A=25 C unless otherwise noted)
P arameter Drain-S ource Voltage Gate-S ource Voltage Drain C urrent-C ontinuous a @ T J =125 C b -P ulsed Drain-S ource Diode Forward C urrent a Maximum P ower Dissipation a Operating Junction and S torage Temperature R ange S ymbol V DS V GS ID IDM IS PD T J , T S TG Limit - 30 20 -3 - 10 -1.25 1.