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Gr Pr
STS3409
Ver 1.0
S a mHop Microelectronics C orp.
P-Channel Enhancement Mode Field Effect Transistor
PRODUCT SUMMARY
V DSS
-30V
ID
-2.2A
R DS(ON) (m Ω) Max
169 @ VGS=-10V 293 @ VGS=-4.5V
FEATURES Super high dense cell design for low R DS(ON). Rugged and reliable. Suface Mount Package.
S OT -23
D S G
G
D
S
ABSOLUTE MAXIMUM RATINGS ( T A=25 °C unless otherwise noted ) Symbol VDS VGS ID IDM PD TJ, TSTG Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous -Pulsed
b a
Limit -30 ±20 TA=25°C TA=70°C TA=25°C TA=70°C -2.2 -1.8 -8
a
Units V V A A A W W °C
Maximum Power Dissipation
1.25 0.
STS3409 Datasheet
