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STM301N - N-Channel MOSFET

Datasheet Summary

Features

  • Super high dense cell design for low R DS(ON). Rugged and reliable. Suface Mount Package. ID 5.2A R DS(ON) (m Ω) Max 48 @ VGS=10V 56 @ VGS=4.5V S O-8 1.

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Datasheet Details

Part number STM301N
Manufacturer SamHop Microelectronics
File Size 188.06 KB
Description N-Channel MOSFET
Datasheet download datasheet STM301N Datasheet
Additional preview pages of the STM301N datasheet.

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Full PDF Text Transcription

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Green Product STM301N Ver1.0 S a mHop Microelectronics C orp. N-Channel Enhancement Mode Field Effect Transistor PRODUCT SUMMARY V DSS 100V FEATURES Super high dense cell design for low R DS(ON). Rugged and reliable. Suface Mount Package. ID 5.2A R DS(ON) (m Ω) Max 48 @ VGS=10V 56 @ VGS=4.5V S O-8 1 ABSOLUTE MAXIMUM RATINGS ( T A=25 °C unless otherwise noted ) Symbol VDS VGS ID IDM EAS PD TJ, TSTG Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous b a Limit 100 ±20 TA=25°C TA=70°C 5.2 4.2 28 156 TA=25°C TA=70°C 2.5 1.
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