Datasheet Specifications
- Part number
- W11NK100Z
- Manufacturer
- STMicroelectronics ↗
- File Size
- 287.28 KB
- Datasheet
- W11NK100Z-STMicroelectronics.pdf
- Description
- STW11NK100Z
Description
STW11NK100Z N-CHANNEL 1000V - 1.1Ω - 8.3A TO-247 Zener-Protected SuperMESH™Power MOSFET TYPE VDSS RDS(on) ID Pw STW11NK100Z 1000 V < 1.38 Ω 8.3 A.
Features
* OF GATE-TO-SOURCE ZENER DIODES The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be applied from gate to source. In this respect the Zener voltaApplications
* Such series complements ST full range of high voltage MOSFETs including revolutionary MDmesh™ products. INTERNAL SCHEMATIC DIAGRAM APPLICATIONS s HIGH CURRENT, HIGH SPEED SWITCHING s IDEAL FOR OFF-LINE POWER SUPPLIES ORDERING INFORMATION SALES TYPE STW11NK100Z MARKING W11NK100Z PACKAGE TO-247W11NK100Z Distributors
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