Datasheet4U Logo Datasheet4U.com

STRH8N10 6A N-channel Power MOSFET

STRH8N10 Description

STRH8N10 Datasheet Rad-Hard 100 V, 6 A, N-channel Power MOSFET 2 1 3 SMD.5 D(3) G(1) S(2) SC3015C Product status link STRH8N10 .
The STRH8N10 is a N-channel Power MOSFET able to operate under severe environment conditions and radiation exposure.

STRH8N10 Features

* VDS 100 V ID RDS(on) typ. Qgtyp. 6A 0.27 Ω 18.5 nC
* Fast switching
* 100 % avalanche tested
* Hermetic package
* 50 krad TID

STRH8N10 Applications

* and suitable for in-Satellite power conversion, motor control and power switch circuits. In case of discrepancies between this datasheet and the relevant agency specification, the latter takes precedence. Device summary Product summary Part numbers STRH8N10S1 STRH8N10SG STRH8N10ST Quality level

📥 Download Datasheet

Preview of STRH8N10 PDF
datasheet Preview Page 2 datasheet Preview Page 3

📁 Related Datasheet

  • STRH80P6FSY3 - P-channel 60V - 0.021 Ohm - TO-254AA Rad-hard low gate charge STripFET (ST Microelectronics)
  • STRH100N10 - N-Channel Power MOSFET (ST Microelectronics)
  • STRH10N25ESY3 - Power MOSFET (ST Microelectronics)
  • STRH12P10ESY3 - Power MOSFET (ST Microelectronics)
  • STRH13N20SY3 - Power MOSFET (ST Microelectronics)
  • STRH40N25FSY3 - N-CHANNEL Power MOSFET (ST Microelectronics)
  • STR-4A60S - Sensitive Gate Triacs (SemiWell Semiconductor)
  • STR-50115 - STR50115 (ETC)

📌 All Tags

STMicroelectronics STRH8N10-like datasheet