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STP6N60M2 N-channel Power MOSFET

STP6N60M2 Description

STF6N60M2, STP6N60M2, STU6N60M2 N-channel 600 V, 1.06 Ω typ., 4.5 A MDmesh II Plus™ low Qg Power MOSFET in TO-220FP, TO-220 and IPAK packages Datashee.
These devices are N-channel Power MOSFETs developed using a new generation of MDmesh™ technology: MDmesh II Plus™ low Qg.

STP6N60M2 Features

* Order codes STF6N60M2 STP6N60M2 STU6N60M2 VDS @ TJmax RDS(on) max ID 650 V 1.2 Ω 4.5 A
* Extremely low gate charge
* Lower RDS(on) x area vs previous generation
* Low gate input resistance
* 100% avalanche tested

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N-channel Power MOSFET STMicroelectronics
STMicroelectronics STP6N60M2-like datasheet