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STP6NA60 - N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR

This page provides the datasheet information for the STP6NA60, a member of the STP6NA60FI N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR family.

Description

This series of POWER MOSFETS represents the most advanced high voltage technology.

The optimized cell layout coupled with a new proprietary edge termination concur to give the device low RDS(on) and gate charge, unequalled ruggedness and superior switching performance.

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Datasheet Details

Part number STP6NA60
Manufacturer STMicroelectronics
File Size 206.48 KB
Description N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR
Datasheet download datasheet STP6NA60 Datasheet
Additional preview pages of the STP6NA60 datasheet.

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Full PDF Text Transcription

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STP6NA60 STP6NA60FI N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR TYPE STP6NA60 STP6NA60FI s s s s s s s V DSS 600 V 600 V R DS( on) < 1.2 Ω < 1.2 Ω ID 6.5 A 3.9 A TYPICAL RDS(on) = 1 Ω ± 30V GATE TO SOURCE VOLTAGE RATING 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC LOW INTRINSIC CAPACITANCES GATE GHARGE MINIMIZED REDUCED THRESHOLD VOLTAGE SPREAD TO-220 3 1 2 1 2 3 DESCRIPTION This series of POWER MOSFETS represents the most advanced high voltage technology. The optimized cell layout coupled with a new proprietary edge termination concur to give the device low RDS(on) and gate charge, unequalled ruggedness and superior switching performance.
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