Datasheet Details
- Part number
- STH160N4LF6-2
- Manufacturer
- STMicroelectronics ↗
- File Size
- 0.98 MB
- Datasheet
- STH160N4LF6-2-STMicroelectronics.pdf
- Description
- N-channel Power MOSFET
STH160N4LF6-2 Description
STH160N4LF6-2 N-channel 40 V, 0.0018 mΩ typ., 120 A, STripFET™ VI DeepGATE™ Power MOSFET in a H²PAK-2 package Datasheet - production data TAB 2 3 1 .
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This device is an N-channel Power MOSFET
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developed using the 6 generation of STripFET™ DeepGATE™ technology, with a new gate structure.
STH160N4LF6-2 Features
* Order code VDS RDS(on) max ID PTOT STH160N4LF6-2 40 V 0.0022 Ω 120 A 150 W
* RDS(on)
* Qg industry benchmark
* Extremely low on-resistance RDS(on)
* Logic level drive
* High avalanche ruggedness
* 100% avalanche tested
Figure 1. Internal schematic diagram
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