STGWA80H65DFB Datasheet - STMicroelectronics

STGWA80H65DFB, 650V 80A IGBT

STGWA80H65DFB Datasheet Trench gate field-stop 650 V, 80 A high speed HB series IGBT TO-247 long leads Product status link STGWA80H65DFB .
This device is an IGBT developed using an advanced proprietary trench gate fieldstop structure.

STGWA80H65DFB-STMicroelectronics.pdf

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Datasheet Details

Part number:

STGWA80H65DFB

Manufacturer:

STMicroelectronics ↗

File Size:

787.20 KB

Description:

650V 80A IGBT

Features

* Maximum junction temperature: TJ = 175 °C
* High speed switching series
* Minimized tail current
* Low saturation voltage: VCE(sat) = 1.6 V (typ. ) @ IC = 80 A
* Tight parameter distribution
* Safe paralleling
* Positive VCE(sat) temp

Applications

* Solar inverters (string and central)

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