Description
STGB30V60DF, STGP30V60DF, STGW30V60DF, STGWT30V60DF Trench gate field-stop IGBT, V series 600 V, 30 A very high speed Datasheet - production data TA.
This device is an IGBT developed using an advanced proprietary trench gate field stop structure.
Features
* Maximum junction temperature: TJ = 175 °C
* Tail-less switching off
* VCE(sat) = 1.85 V (typ. ) @ IC = 30 A
* Tight parameters distribution
* Safe paralleling
* Low thermal resistance
Applications
* Photovoltaic inverters
* Uninterruptible power supply
* Welding
* Power factor correction