STGW30H65FB, STGFW30H65FB IGBT

STMicroelectronics

STGW30H65FB Description

STGFW30H65FB, STGW30H65FB Datasheet Trench gate field-stop 650 V, 30 A high speed HB series IGBT 3 2 1 TO-247 1 TO-3PF 3 2 1 G(1) C(2, TAB) E(3.
These devices are IGBTs developed using an advanced proprietary trench gate field-stop structure.

STGW30H65FB Features

* Maximum junction temperature: TJ = 175 °C
* High speed switching series
* Minimized tail current
* VCE(sat) = 1.55 V (typ. ) at IC = 30 A
* Tight parameters distribution
* Safe paralleling

STGW30H65FB Applications

* Photovoltaic inverters
* Power factor correction
* Welding

📥 Download Datasheet

STGW30H65FB Datasheet Preview — This datasheet PDF includes multiple part numbers: STGW30H65FB, STGFW30H65FB. Please refer to the document for exact specifications by model.

Datasheet Details

Part number: STGW30H65FB, STGFW30H65FB
Manufacturer: STMicroelectronics ↗
File Size: 432.91 KB
Datasheet: STGFW30H65FB-STMicroelectronics.pdf
Description: IGBT
Note: This datasheet PDF includes multiple part numbers: STGW30H65FB, STGFW30H65FB.
Please refer to the document for exact specifications by model.

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IGBT STMicroelectronics

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