Description
STGFW30H65FB, STGW30H65FB Datasheet Trench gate field-stop 650 V, 30 A high speed HB series IGBT 3 2 1 TO-247 1 TO-3PF 3 2 1 G(1) C(2, TAB) E(3.
These devices are IGBTs developed using an advanced proprietary trench gate field-stop structure.
Features
* Maximum junction temperature: TJ = 175 °C
* High speed switching series
* Minimized tail current
* VCE(sat) = 1.55 V (typ. ) at IC = 30 A
* Tight parameters distribution
* Safe paralleling
Applications
* Photovoltaic inverters
* Power factor correction
* Welding