STGW25M120DF3 1200V 25A low-loss M series IGBT

STMicroelectronics

Description

STGW25M120DF3 Datasheet Trench gate field-stop, 1200 V, 25 A, low-loss M series IGBT in a TO-247 package 3 2 1 TO-247 .
E(3) NG1E3C2T This device is an IGBT developed using an advanced proprietary trench gate fieldstop structure.

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Datasheet Specifications

Part number: STGW25M120DF3
Manufacturer: STMicroelectronics ↗
File Size: 664.08 KB
Datasheet: STGW25M120DF3-STMicroelectronics.pdf
Description: 1200V 25A low-loss M series IGBT

Features

* Maximum junction temperature: TJ = 175 °C
* 10 μs of short-circuit withstand time
* Low VCE(sat) = 1.85 V (typ. ) @ IC = 25 A
* Tight parameter distribution
* Positive VCE(sat) temperature coefficient
* Low thermal resistance
* Soft- and fast-

Applications

* Industrial drives
* UPS
* Solar

STGW25M120DF3 Distributors

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STGW25M120DF3 1200V 25A low-loss series IGBT STMicroelectronics

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