STGD6M65DF2 Datasheet - STMicroelectronics

STGD6M65DF2, IGBT

STGD6M65DF2 Datasheet Trench gate field-stop, 650 V, 6 A, low-loss M series IGBT in a DPAK package TAB 23 1 DPAK C(2, TAB) G(1) E(3) NG1E3C2T Prod.
This device is an IGBT developed using an advanced proprietary trench gate fieldstop structure.

STGD6M65DF2-STMicroelectronics.pdf

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Datasheet Details

Part number:

STGD6M65DF2

Manufacturer:

STMicroelectronics ↗

File Size:

885.14 KB

Description:

IGBT

Features

* Maximum junction temperature: TJ = 175 °C
* 6 μs of minimum short-circuit withstand time
* VCE(sat) = 1.55 V (typ. ) @ IC = 6 A
* Tight parameter distribution
* Safer paralleling
* Positive VCE(sat) temperature coefficient
* Low therm

Applications

* Industrial motor control
* PFC converters, single phase input

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