STGB30H65DFB2 high-speed HB2 series IGBT

STMicroelectronics

STGB30H65DFB2 Description

STGB30H65DFB2 Datasheet Trench gate field-stop, 650 V, 30 A, high-speed HB2 series IGBT in a D²PAK package TAB 2 3 1 D²PAK C(2, TAB) G(1) E(3) Featu.
The newest IGBT 650 V HB2 series represents an evolution of the advanced proprietary trench gate field-stop structure.

STGB30H65DFB2 Features

* Maximum junction temperature : TJ = 175 °C
* Low VCE(sat) = 1.65 V (typ. ) @ IC = 30 A
* Very fast and soft recovery co-packaged diode
* Minimized tail current
* Tight parameter distribution
* Low thermal resistance
* Positive VCE(sat) tempera

📥 Download Datasheet

STGB30H65DFB2 Datasheet Preview — Preview of STGB30H65DFB2 PDF

Datasheet Details

Part number: STGB30H65DFB2
Manufacturer: STMicroelectronics ↗
File Size: 645.04 KB
Datasheet: STGB30H65DFB2-STMicroelectronics.pdf
Description: high-speed HB2 series IGBT

📁 Related Datasheet

STGB3NB60FD - N-CHANNEL IGBT (ST Microelectronics)
STGB3NB60HD - N-CHANNEL IGBT (ST Microelectronics)
STGB3NB60K - IGBT (ST Microelectronics)
STGB3NB60KD - IGBT (ST Microelectronics)
STGB3NB60SD - N-CHANNEL IGBT (ST Microelectronics)
STGB10HF60KD - Short-circuit Rugged IGBT (ST Microelectronics)
STGB10N60L - N-CHANNEL IGBT (ST Microelectronics)
STGB10NB37LZ - IGBT (ST Microelectronics)

📌 All Tags

high-speed HB2 series IGBT STMicroelectronics

STMicroelectronics STGB30H65DFB2-like datasheet

STGB30H60DF - 30A high speed trench gate field-stop IGBT
STGB30H60DFB - 600V 30A IGBT
STGB30H60DLLFBAG - Automotive-grade trench gate field-stop IGBT
STGB30M65DF2 - Trench gate field-stop IGBT
STGB30NC60K - short circuit rugged IGBT
STGB30NC60W - ultra fast IGBT