STGB30H60DFB 600V 30A IGBT

STMicroelectronics

STGB30H60DFB Description

STGB30H60DFB, STGP30H60DFB Datasheet Trench gate field-stop 600 V, 30 A high speed HB series IGBT TAB TAB 3 1 D2PAK TO-220 1 23 .
These devices are IGBTs developed using an advanced proprietary trench gate fieldstop structure.

STGB30H60DFB Features

* Maximum junction temperature: TJ = 175 °C
* High speed switching series
* Minimized tail current
* Low saturation voltage: VCE(sat) = 1.55 V (typ. ) @ IC = 30 A
* Tight parameter distribution
* Safe paralleling
* Positive VCE(sat) tem

STGB30H60DFB Applications

* Photovoltaic inverters

📥 Download Datasheet

STGB30H60DFB Datasheet Preview — Preview of STGB30H60DFB PDF

Datasheet Details

Part number: STGB30H60DFB
Manufacturer: STMicroelectronics ↗
File Size: 3.27 MB
Datasheet: STGB30H60DFB-STMicroelectronics.pdf
Description: 600V 30A IGBT

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600V 30A IGBT STMicroelectronics

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