STGB18N40LZ Datasheet - STMicroelectronics

STGB18N40LZ, EAS 180 mJ - 400 V - internally clamped IGBT

STGB18N40LZ STGD18N40LZ, STGP18N40LZ EAS 180 mJ - 390 V - internally clamped IGBT .
This application-specific IGBT utilizes the most advanced PowerMESH™ technology.

STGB18N40LZ_STMicroelectronics.pdf

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Datasheet Details

Part number:

STGB18N40LZ

Manufacturer:

STMicroelectronics ↗

File Size:

629.59 KB

Description:

EAS 180 mJ - 400 V - internally clamped IGBT

Features

* AEC Q101 compliant
* 180 mJ of avalanche energy @ TC = 150 °C, L = 3 mH
* ESD gate-emitter protection
* Gate-collector high voltage clamping
* Logic level gate drive
* Low saturation voltage
* High pulsed current capability
* Gate and gate-emitter resistor Applicati

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