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STG50M170F3D7 IGBT

STG50M170F3D7 Description

STG50M170F3D7 Datasheet Trench gate field-stop 1700 V, 50 A low loss M series IGBT die in D7 packing C G .
This device is an IGBT developed using an advanced proprietary trench gate fieldstop structure.

STG50M170F3D7 Features

* Low VCE(sat) = 2 V (typ. ) @ IC = 50 A
* 10 μs of short-circuit withstand time
* Minimized tail current
* Tight parameter distribution

STG50M170F3D7 Applications

* E
* Industrial motor control EGCD

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IGBT STMicroelectronics
STMicroelectronics STG50M170F3D7-like datasheet