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STG50M120F3D7 IGBT

STG50M120F3D7 Description

STG50M120F3D7 Datasheet Trench gate field-stop 1200 V, 50 A low-loss M series IGBT die in D7 packing C G .
This device is an IGBT developed using an advanced proprietary trench gate fieldstop structure.

STG50M120F3D7 Features

* Maximum junction temperature: TJ = 175 °C
* 10 μs of short-circuit withstand time
* Low VCE(sat) = 1.7 V (typ. ) @ IC = 50 A
* Tight parameter distribution

STG50M120F3D7 Applications

* E
* Industrial motor control EGCD
* Industrial drives
* Solar inverters

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IGBT STMicroelectronics
STMicroelectronics STG50M120F3D7-like datasheet