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STFV4N150 - N-channel Power MOSFET

Description

Using the well consolidated high voltage MESH OVERLAY™ process, STMicroelectronics has designed an advanced family of very high voltage Power MOSFETs with outstanding performances.

Features

  • Type STFV4N150 STFW4N150 (1) STP4N150 STW4N150 VDSS RDS(on) max ID 1500 V 1500 V 1500 V 1500 V.

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Datasheet Details

Part number STFV4N150
Manufacturer STMicroelectronics
File Size 457.91 KB
Description N-channel Power MOSFET
Datasheet download datasheet STFV4N150 Datasheet
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STFV4N150 - STFW4N150 STP4N150 - STW4N150 N-channel 1500 V - 5 Ω - 4 A - PowerMESH™ Power MOSFET TO-220 - TO-220FH - TO-247 - TO-3PF Features Type STFV4N150 STFW4N150 (1) STP4N150 STW4N150 VDSS RDS(on) max ID 1500 V 1500 V 1500 V 1500 V <7Ω 4A <7Ω 4A <7Ω 4A <7Ω 4A 1. All data which refers solely to the TO-3PF package is preliminary ■ 100% avalanche tested ■ Intrinsic capacitances and Qg minimized ■ High speed switching ■ Fully isolated TO-3PF and TO-220FH plastic packages ■ Creepage distance path is 5.4 mm (typ.) for TO-3PF ■ Creepage distance path is > 4 mm for TO-220FH 3 2 1 TO-220 3 2 1 TO-247 3 2 1 TO-3PF 3 2 1 TO-220FH Figure 1. Internal schematic diagram.
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