Description
This very high voltage N-channel Power MOSFET is designed using MDmesh™ K5
technology based on an innovative proprietary
vertical structure.The result is a dramatic
reduction in on-resistance and ultra-low gate
charge for applications requiring superior power
S(3)
AM15572v1_no_tab
density and high efficiency.Order code
Table 1: Device summary
Marking
Package
Packing
STF9N80K5 STFI9N80K5
9N80K5
TO-220FP I²PAKFP(TO-281)
Tube
November 2015
DocID028359 Rev 2
This is information
Features
- Order code STF9N80K5 STFI9N80K5
VDS 800 V
RDS(on) max. 0.90 Ω
ID 7A
TO-220FP
I2PAKFP (TO-281)
Figure 1: Internal schematic diagram
D(2).
- Industry’s lowest RDS(on) x area.
- Industry’s best figure of merit (FoM).
- Ultra-low gate charge.
- 100% avalanche tested.
- Zener-protected.