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STB36NM60ND - N-CHANNEL POWER MOSFET

STB36NM60ND Description

STB36NM60ND, STW36NM60ND Automotive-grade N-channel 600 V, 0.097 Ω typ., 29 A FDmesh™ II Power MOSFETs (with fast diode) in D2PAK and TO-247 packages .
These FDmesh™ II Power MOSFETs with intrinsic fast-recovery body diode are produced using the second generation of MDmesh™ technology.

STB36NM60ND Features

* TAB 3 1 D2PAK 3 2 1 TO-247 Figure 1. Internal schematic diagram $ 4!" ' 3 !-V Order codes STB36NM60ND STW36NM60ND VDSS @TJ max. 650 V RDS(on) max. 0.110 Ω ID 29 A

STB36NM60ND Applications

* and AEC-Q101 qualified
* 100% avalanche tested
* Low input capacitance and gate charge
* Low gate input resistance
* Extremely high dv/dt and avalanche capabilities Applications

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N-CHANNEL POWER MOSFET STMicroelectronics
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