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STB33N60M2 - N-CHANNEL POWER MOSFET

STB33N60M2 Description

STB33N60M2 N-channel 600 V, 0.108 Ω typ., 26 A MDmesh II Plus™ low Qg Power MOSFETs in a D2PAK package Datasheet - production data .
This device is an N-channel Power MOSFET developed using a new generation of MDmesh™ technology: MDmesh II Plus™ low Qg.

STB33N60M2 Features

* TAB 1 D 2 PAK 3 Figure 1. Internal schematic diagram , TAB AM15572v1 Order code STB33N60M2 VDS @ TJmax 650 V RDS(on) max 0.125 Ω ID 26 A
* Extremely low gate charge
* Lower RDS(on) x area vs previous generation
* MDmesh™ II technology
* Low gate input resist

STB33N60M2 Applications

* Switching applications

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N-CHANNEL POWER MOSFET STMicroelectronics
STMicroelectronics STB33N60M2-like datasheet