STB30N10 Datasheet (ST Microelectronics)

STB30N10, N-CHANNEL Power MOSFET

N-CHANNEL 100V - 0.06 Ω - 30A D2PAK POWER MOSFET TRANSISTOR TYPE STB30N10 s s s s s s s STB30N10 PRELIMINARY DATA VDSS 100 V RDS(on) <0.07 Ω ID 30 A s TYPICAL RDS(on) = 0.06 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC LOW GATE CHARGE VERY HIGH CURRENT CAPABILITY APPLICATION ORIENTED CHARACTERIZATION SURFACE-MOUNTING D2PAK (TO-263) POWER PACKAGE IN TUBE (NO SUFFIX) OR IN TAPE & REEL (SUFFIX “T4") 3 1 D2PAK TO-263 (suffix“T4”) APPLICATIONS s HIGH