Datasheet4U Logo Datasheet4U.com

SCT20N120 Silicon carbide Power MOSFET

SCT20N120 Description

SCT20N120 Datasheet Silicon carbide Power MOSFET 1200 V, 169 mΩ typ., 20 A in an HiP247 package .
AM01475v1_noZen This silicon carbide Power MOSFET is produced exploiting the advanced, innovative properties of wide bandgap materials.

SCT20N120 Features

* HiP247 3 2 1 D(2, TAB)
* Very low RDS(on) over the entire temperature range
* Very high operating junction temperature capability (TJ = 200 °C)
* Very fast and robust intrinsic body diode

SCT20N120 Applications

* AC-DC converters
* DC-DC converters
* Motor drives
* Solar inverters (string and central)

📥 Download Datasheet

Preview of SCT20N120 PDF
datasheet Preview Page 2 datasheet Preview Page 3

📁 Related Datasheet

  • SCT2001 - 2 0mm Pitch Crimp Connector (Scondar)
  • SCT2004 - 4-Channel High Constant Current Driver (StarChips)
  • SCT2004S - 4-Channel Constant Current Driver (StarChips)
  • SCT2024 - 16-bit Serial-In/Parallel-Out Constant-Current LED Driver (StarChips)
  • SCT2026 - 16-bit Serial-In/Parallel-Out Constant-Current LED Driver (StarChips)
  • SCT2027 - 16-bit Constant-Current LED Driver (StarChips)
  • SCT2080KE - N-channel SiC power MOSFET (ROHM)
  • SCT2080KEHR - Automotive Grade N-channel SiC power MOSFET (ROHM)

📌 All Tags

Silicon carbide Power MOSFET STMicroelectronics
STMicroelectronics SCT20N120-like datasheet