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RF5L10111K0CB4 RF power LDMOS transistor

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Description

RF5L10111K0CB4 Datasheet 1000 W, 50 V, 1030 to 1090 MHz RF power LDMOS transistor 1 2 5 4 3 D4E Pin connection Pin Connection 1 Drain A 2 D.
The RF5L10111K0CB4 is a 1000 W, 50 V high performance, internally matched LDMOS transistor, designed for avionic applications in the frequency range f.

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Features

* Order code Frequency VDD POUT Gain Efficiency RF5L10111K0CB4 1030 MHz 50 V 1000 W 14.5 dB 52%
* High efficiency and linear gain operations
* Integrated ESD protection
* Internally matched pair transistors in push-pull configuration
* Large positive and negat

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