RF5L05950CF2 RF power LDMOS transistor

STMicroelectronics

Description

RF5L05950CF2 Datasheet 950 W, 50 V, HF to 500 MHz RF power LDMOS transistor 2 1 3 C2 Pin connection Pin Connection 1 Gate 2 Drain 3 Source .
The RF5L05950CF2 is a 950 W, 50 V, high performance, unmatched LDMOS FET, designed for wideband commercial and industrial applications in the frequenc.

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Datasheet Specifications

Part number: RF5L05950CF2
Manufacturer: STMicroelectronics ↗
File Size: 722.49 KB
Datasheet: RF5L05950CF2-STMicroelectronics.pdf
Description: RF power LDMOS transistor

Features

* Order code Frequency VDD POUT Gain Efficiency RF5L05950CF2(1) 108 MHz 50 V 2000 W 20 dB 76% 1. Measured on 88-108 MHz wideband test board with two RF5L05950CF2 devices connected in push-pull.
* High efficiency and linear gain operations
* Integrated ESD protection

Applications

* 30-88 MHz/136-174 MHz ground communication
* 1.6-30 MHz HF transceiver
* Plasma generator
* Particle accelerator

RF5L05950CF2 Distributors

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RF5L05950CF2 power LDMOS transistor STMicroelectronics

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